BSL207SP H6327

BSL207SP Rev. 2.05 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS(on) 41 mΩ • Super Logic Level (2.5 V rated) ID -6 A • 150°C operating temperature P-TSOP6-6 • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 4 3 2 1 5 6 P-TSOP6-6 • Halogen free according to IEC61249­2­21 Type Package Tape and reel BSL207SP P-TSOP6-6 H6327:3000 pcs/r. sPA Drain pin 1,2, 5,6 Gate pin 3 Marking Source pin 4 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -6 TA=70°C -4.8 ID puls -24 EAS 44 mJ dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation Ptot 2 W -55... +150 °C Pulsed drain current TA=25°C Avalanche energy, single pulse ID =-6 A , VDD=-10V, RGS =25Ω Reverse diode dv/dt IS =-6A, VDS=-16V, di/dt=200A/µs, Tjmax =150°C TA=25°C Tj , Tstg Operating and storage temperature 55/150/56 IEC climatic category; DIN IEC 68-1 ESD Class JESD22-A114-HBM Class 1a Page 1 2013-11-06 BSL207SP Rev. 2.05 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 50 - - 230 - - 62.5 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 -0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-40µA Zero gate voltage drain current µA IDSS VDS =-20V, VGS =0, Tj =25°C - -0.1 -1 VDS =-20V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 43 65 mΩ RDS(on) - 29 41 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-4.9A Drain-source on-state resistance VGS =-4.5, ID =-6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤ 5 sec. Page 2 2013-11-06 BSL207SP Rev. 2.05 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 7 14 - S pF Dynamic Characteristics Transconductance gfs VDS ≥2∗ID ∗RDS(on)max , ID =-4.8A Input capacitance Ciss VGS =0, VDS =-15V, - 1007 - Output capacitance Coss f=1MHz - 410 - Reverse transfer capacitance Crss - 332 - Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 9 14 Rise time tr ID =-1A, RG=6Ω - 17 26 Turn-off delay time td(off) - 42 63 Fall time tf - 53 76 - -1.7 -2.6 - -7.1 -10.7 - -13.3 -20 V(plateau) VDD =-10V, ID =-6A - -1.6 - V IS - - -2.3 A - - -24 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-10V, ID =-6A VDD =-10V, ID =-6A, nC VGS =0 to -4.5V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IF | = |ID | - -0.9 -1.3 V Reverse recovery time trr VR =-10V, |IF | = |lD |, - 29 36 ns Reverse recovery charge Qrr diF /dt=100A/µs - 12 15 nC Page 3 2013-11-06 BSL207SP Rev. 2.05 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 4.5 V 2.2 BSL207SP -6.5 BSL207SP A W -5.5 1.8 -5 -4.5 1.4 ID Ptot 1.6 -4 1.2 -3.5 1 -3 -2.5 0.8 -2 0.6 -1.5 0.4 -1 0.2 0 0 -0.5 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 2 BSL207SP 10 2 = -10 1 R (o DS V BSL207SP K/W /I D A 160 TA 3 Safe operating area -10 °C DS tp = 130.0µs 10 1 n) ID Z thJS 1 ms 10 0 10 ms -10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 -10 -1 DC 0.02 10 -3 0.01 single pulse -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2013-11-06 BSL207SP Rev. 2.05 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 60 0.065 A Vgs = -3.5V Vgs = -2V Vgs = -3V 50 0.055 RDS(on) 45 - ID Vgs = -2.2V Ω Vgs = -4V Vgs = -4.5V Vgs = -6V Vgs = -10V 40 35 Vgs = -2.5V Vgs= - 3V Vgs = - 4V Vgs = - 4.5V Vgs= - 5V Vgs = - 6V Vgs= - 8V 0.05 0.045 0.04 30 0.035 Vgs = -2.5V 25 0.03 20 0.025 15 0.02 Vgs = -2V 10 Vgs = - 10V 0.015 5 0 0 1 2 3 4 5 6 7 8 V 0.01 0 10 4 8 12 16 20 24 - V DS A 30 - ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: tp = 80 µs 20 22 A S 18 g fs - ID 16 14 12 12 10 8 8 6 4 4 2 0 0 0.5 1 1.5 2 V 0 0 3 - V GS 4 8 12 16 A 24 - ID Page 5 2013-11-06 BSL207SP Rev. 2.05 9 Drain-source on-resistance 10 Gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -6 A, VGS = -4.5 V parameter: VGS = VDS , ID = -40 µA 55 1.4 V 98% - VGS(th) RDS(on) mΩ 45 40 98% 1 0.8 typ. 35 0.6 typ. 2% 30 0.4 25 0.2 20 -60 -20 20 60 100 °C 0 -60 160 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 BSL207SP A pF C IF -10 1 Ciss 10 3 Coss -10 0 Tj = 25 °C typ Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 2 0 5 10 V 20 - VDS -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2013-11-06 BSL207SP Rev. 2.05 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -6 A |VGS| = f (QGate ) VDD = -10 V, RGS = 25 Ω parameter: ID = -6 A pulsed 45 12 V mJ 10 9 - VGS E AS 35 30 8 7 25 0.2 VDS max. 0.5 VDS max. 0.8 VDS max. 6 20 5 15 4 3 10 2 5 1 0 25 50 75 100 °C 150 Tj 0 0 4 8 12 16 20 nC 28 |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSL207SP V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Page 7 2013-11-06 Rev. 2.05 Page 8 BSL207SP 2013-11-06